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SILICON N CHANNEL MOS TYPE (7T-MOS)
AUDIO FREQUENCY POWER AMPLIFIER APPLICATION.
FEATURES . High Breakdown Voltage . High Forward Transfoer Admittance . Complementary to 2SJ115
VDSS =160V lYf s |=2.0S (Typ.)
Unit in mm
m15.9MAX.. 03.2±O2
eQ
T c!
-H
)-
rf.,
2.0 + 3 ,| + 03 I
&45±Q2,
.&45±Q2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range
SYMBOL Vpss VGSS ID PD Tc h
[stg_
RATING 160 ±20
UNIT
100 150
-55 -150
c5c5
+1
m
UM
1. QATE 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC
TOSHIBA Weight : 4.
2SK405 Datasheet
