Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Switching Regulator Applications
- Low drain-source ON resistance: RDS (ON) = 0.75 (typ.)
- High forward transfer admittance: |Yfs| = 5.5S (typ.)
- Low leakage current: IDSS = 100 A (VDS = 600 V)
- Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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