• Part: 3SK73
  • Description: Silicon N-Channel Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 172.55 KB
Download 3SK73 Datasheet PDF
Toshiba
3SK73
FEATURES : Wide AGC Range and Few Changes of Response Extremely Low Reverse Transfer Capcitance : Crss=0.03p F (Typ.) Low Noise Figure : NF=2.2d B (Typ.) (f=100MHz) Possibility Low Operation Voltage. Superior Cross Modulation Performance. Contains Cate Protection Diodes. 3.0 .4.2MAX b 4V4 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate 1-Source Voltage Gate 2-Source Voltaee Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL V DS 'G1S V G2S Tch stg RATING 20 UNIT V ±9 ±9 30 m A 300 m W -55^125 °C 1. SOURCE 2. DRAIN 3. GATE 2 4. GATE 1 -B- 4D2A Weight : 0.13^ ELECTRICAL CHARACTERISTICS (MON SOURCE, Ta=25°C) CHARACTERISTIC Gate 1 Cut-off Current Gate 2 Cut-off Current SYMBOL IG1SS IG2SS TEST CONDITION VDS =0,VGl S=±7v,VG2S^o VDS=0,VG1S=0,VG2S.±7V MIN. - TYP. MAX. UNIT - ±50 n A - ±50 n A Drain-Source Voltage Drain Current Gatel-Source Cut-off Voltage Gate2-Source Cut-off Voltage Forward Transfer Admittance...