3SK77
FEATURES
- Extremely Low Reverse Transfer Capacitance. : C rss =0.03p F (Typ.)
- Low Noise Figure : NF=2.2d B (Typ.) at f =200MHz
- Superior Cross Modulation Performance.
- Contains Gate Protection Diodes.
Unit in mm
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Drain-Source Voltage Gatel-Source Voltage Gate2-Source Voltage Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range
SYMBOL VD S 'G1S VG2S
PD Teh L stg
RATING 20 ±9
UNIT V
±9
30 m A
300 m W
125 -55^125
SOURCE DRAIN
:>ATE 2
GATE 1
TOSHI BA Weight : 0.12g
ELECTRICAL CHARACTERISTICS (Ta=25°c)
CHARACTERISTIC
SYMBOL
Gatel Leakage Current Gate2 Leakage Current
I G1SS I G2SS
Drain-Source Breakdown Voltage V (BR)DSX
Drain Current (Note) Gatel-Source Cut-off Voltage Gate2-Source Cut-off Voltage
I DSS V Gl S(off) VG 2S(off)
Forward Transfer Admittance
|yf S |
Input Capacitance
C iss
Reverse Transfer Capacitance
^rss
Power Gain
Noise Figure
TEST CONDITION
VDS=0,VGis=±7V,VG...
