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Switching Diodes Silicon Epitaxial Planar
BAV70
1. Applications
• Ultra-High-Speed Switching
2. Packaging and Internal Circuit
BAV70
1: Anode 1 2: Anode 2 3: Cathode
SOT23
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-repetitive peak forward surge current Power dissipation
VRM VR IO IFM IFSM PD
(Note 1) (Note 1) (Note 1), (Note 2)
(Note 3)
100 100 215 500
2 150 320
V
mA
A mW
Junction temperature Storage temperature
Tj Tstg
150 -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
BAV70 Datasheet
