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2SC2532
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2532
Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications
Unit: mm
• High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage
VCEO 40 V
Emitter-base voltage
VEBO 10 V
Collector current
IC 300 mA
Base current
IB 60 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55~125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g.
C2532 Datasheet
