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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5458
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications
2SC5458
Unit: mm
• Excellent switching times: tr = 0.5 µs (max) tf = 0.3 µs (max) (IC = 0.4 A)
• High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
600 400
7 0.8 1.5 0.5 1.0 10 150 −55 to 150
Unit V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.
C5458 Datasheet
