The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548A
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC5548A
Unit: mm
• High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 40 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
600 400
7 2 4 0.5 1.0 15 150 −55 to 150
V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.
C5548A Datasheet
