C5550
C5550 is 2SC5550 manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5550
High-Speed Switching Application for Inverter Lighting System
2SC5550
Unit: mm
- Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA)
- High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)
- High breakdown voltage: VCEO = 400 V
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
Tj Tstg
Rating
400 400
7 1 2 0.5 1.5 10 150
- 55 to 150
Unit V V...
