C6067 - Silicon NPN Transistor

Toshiba

Datasheet Details

Part number	C6067
Manufacturer	Toshiba
File Size	143.18 KB
Description	Silicon NPN Transistor
Datasheet	C6067 Datasheet
Additional preview pages of the C6067 datasheet.

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC6067 ○ Medium Power Amplifier Applications ○ Strobe Flash Applications 2SC6067 Unit: mm Low Saturation Voltage: VCE (sat) = 0.3 V (max) (@ IC=3A / IB=60mA） Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current DC Pulsed Collector power dissipation Junction temperature VCBO VCEO VEBO IC ICP PC (Note1) Tj 15 10 6 5 9 550 150 V V V A mW °C 1. Emitter 2. Collector Mini 3. Base Storage temperature range Tstg −55 to 150 °C JEDEC ― Note 1: When a device is mounted on a glass epoxy board (35 mm × 30 mm × 1mm) Note: Using continuously under heavy loads (e.g.

Published: Apr 13, 2015 |