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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6079
Power Amplifier Applications Power Switching Applications
2SC6079
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ)
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage
Collector current
Base current Collector power dissipation Junction temperature Storage temperature range
DC Pulse
Symbol
VCBO VCEX VCEO VEBO
IC ICP IB PC Tj Tstg
Rating
Unit
160
V
160
V
80
V
9
V
2.0
A
4.0
A
1.5
A
1
W
150
°C
−55～150
°C
1 : BASE 2 : COLLECTOR 3 : EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight:0.
C6079 Datasheet
