C6079 - Silicon NPN Transistor

Toshiba

Datasheet Details

Part number	C6079
Manufacturer	Toshiba
File Size	214.39 KB
Description	Silicon NPN Transistor
Datasheet	C6079 Datasheet
Additional preview pages of the C6079 datasheet.

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Full PDF Text Transcription

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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Power Switching Applications 2SC6079 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating Unit 160 V 160 V 80 V 9 V 2.0 A 4.0 A 1.5 A 1 W 150 °C −55～150 °C 1 : BASE 2 : COLLECTOR 3 : EMITTER JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight:0.

Published: Apr 21, 2019 |