CES388
CES388 is manufactured by Toshiba.
Schottky Barrier Diode Silicon Epitaxial
1. Applications
- High-Speed Switching
2. Features
(1) AEC-Q101 qualified (Note 1) (2) Low forward voltage : VF(3) = 0.54 V (typ). (3) Low reverse current : IR(1) = 1 µA (max). (4) Small and pact ESC package, equivalent to SOD-523 and SC-79 packages.
Note 1: For detail information, please contact our sales.
3. Packaging and Internal Circuit
1: Cathode 2: Anode
©2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2011-10
2023-07-08 Rev.3.0
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