Toshiba CES388
Schottky Barrier Diode
| Part No. | CES388 |
|---|---|
| Datasheet | CES388 Download |
| Manufacturer |  Toshiba |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
APPLICATIONS
● High-Speed Switching 2.FEATURES
(1) AEC-Q101 qualified (Note 1) (2) Low forward voltage : VF(3) = 0.54 V (typ). (3) Low reverse current : IR(1) = 1 µA (max). (4) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit CES388 ESC 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2011-10 2023-07-08 Rev.3.0 CES388 4.ABSOLUTE MAXIMUM RATINGS
(Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 45 V Reverse voltage VR 40 Peak forward current Average rectified current IFM IO 300 mA 100 Non-repetitive peak forward surge current IFSM (Note 1) 1 A Power dissipation Junction temperature PD (Note 2) 150 mW Tj 125 Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the sig...
