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CES388 - Schottky Barrier Diode

Features

  • (1) Low forward voltage : VF(3) = 0.54 V (typ). (2) Low reverse current : IR(1) = 1 µA (max). (3) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. 3. Packaging and Internal Circuit CES388 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage VRM VR 45 V 40 Peak forward current Average rectified current Non-repetitive peak forward surge curre.

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Datasheet Details

Part number CES388
Manufacturer Toshiba
File Size 119.69 KB
Description Schottky Barrier Diode
Datasheet download datasheet CES388 Datasheet
Additional preview pages of the CES388 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diode Silicon Epitaxial CES388 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage : VF(3) = 0.54 V (typ). (2) Low reverse current : IR(1) = 1 µA (max). (3) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. 3. Packaging and Internal Circuit CES388 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage VRM VR 45 V 40 Peak forward current Average rectified current Non-repetitive peak forward surge current Power dissipation Junction temperature IFM IO IFSM PD Tj  (Note 1) (Note 2) 300 100 1 150 125 mA A mW  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e.g.
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