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CUS10S40 - Schottky Barrier Diode

Key Features

  • (1) Small package (2) Low forward voltage: VF(2) = 0.45 V (typ. ) 3. Packaging and Internal Circuit USC CUS10S40 1: Cathode 2: Anode ©2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2013-09 2025-01-23 Rev.3.0 CUS10S40 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 40 V Reverse voltage VR 30 V Average rectified current IO (Note 1) 1.0 A Non.

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Datasheet Details

Part number CUS10S40
Manufacturer Toshiba
File Size 140.32 KB
Description Schottky Barrier Diode
Datasheet download datasheet CUS10S40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode Silicon Epitaxial CUS10S40 1. Applications • High-Speed Switching 2. Features (1) Small package (2) Low forward voltage: VF(2) = 0.45 V (typ.) 3. Packaging and Internal Circuit USC CUS10S40 1: Cathode 2: Anode ©2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2013-09 2025-01-23 Rev.3.0 CUS10S40 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 40 V Reverse voltage VR 30 V Average rectified current IO (Note 1) 1.0 A Non-repetitive peak forward surge current IFSM (Note 2) 5 A Junction temperature Tj 125 � Storage temperature Tstg -55 to 125 � Note: Using continuously under heavy loads (e.g.