Datasheet4U Logo Datasheet4U.com

CUS15S30 - Schottky Barrier Diode

Datasheet Summary

Features

  • (1) Low forward voltage: VF(1) = 0.33 V (typ. ) 3. Packaging and Internal Circuit USC CUS15S30 1: Cathode 2: Anode Start of commercial production 2012-10 1 2014-04-07 Rev.3.0 CUS15S30 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 1.5 A Non-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperature Tj 125.

📥 Download Datasheet

Datasheet preview – CUS15S30

Datasheet Details

Part number CUS15S30
Manufacturer Toshiba
File Size 131.57 KB
Description Schottky Barrier Diode
Datasheet download datasheet CUS15S30 Datasheet
Additional preview pages of the CUS15S30 datasheet.

📁 Similar Datasheet

  • CUS15I30A - Schottky Barrier Rectifier (Toshiba Semiconductor)
  • CUS1205 - 1 WATT (Power-One)
  • CUS1209 - 1 WATT (Power-One)
  • CUS1212 - 1 WATT (Power-One)
  • CUS1215 - 1 WATT (Power-One)
  • CUS-05050-0.5L - DC-DC Converter Modules (GROUP-TEK)
  • CUS-05050-1L - DC-DC Converter Modules (GROUP-TEK)
  • CUS01 - Schottky Barrier Rectifier (Toshiba Semiconductor)
  • CUS02 - Schottky Barrier Rectifier (Toshiba Semiconductor)
  • CUS509 - 1 WATT (Power-One)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
Schottky Barrier Diode Silicon Epitaxial CUS15S30 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit USC CUS15S30 1: Cathode 2: Anode Start of commercial production 2012-10 1 2014-04-07 Rev.3.0 CUS15S30 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 1.5 A Non-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
Published: |