Datasheet Summary
Discrete IGBTs Silicon N-Channel IGBT
1. Applications
- Dedicated to Current-Resonant Inverter Switching Applications
- Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.20 µs (typ.) (IC = 40 A) (4) Low saturation voltage: VCE(sat) = 1.45 V (typ.) (IC = 40 A) (5) TO-3P(N)IS (Toshiba package name)
3. Packaging and Internal Circuit
TO-3P(N)IS
1: Gate 2: Collector 3: Emitter
Start of mercial production
2010-06
2014-01-07
Rev.2.0
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