Datasheet4U Logo Datasheet4U.com

GT40WR21 - Silicon N-Channel IGBT

Features

  • (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.15 µs (typ. ) (IC = 40 A) FWD : trr = 1.0 µs (typ. ) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 2.9 V (typ. ) (IC = 40 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of comme.

📥 Download Datasheet

Datasheet preview – GT40WR21

Datasheet Details

Part number GT40WR21
Manufacturer Toshiba
File Size 381.97 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT40WR21 Datasheet
Additional preview pages of the GT40WR21 datasheet.

📁 Similar Datasheet

  • GT400P10 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT400P10T - P-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT4050D - Photovoltaic bypass module diode (GREATEEN)
  • GT40G121 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40J321 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40J322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40M101 - SILICON N-CHANNEL IGBT (Toshiba Semiconductor)
  • GT40M301 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • GT40Q321 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40Q322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
Discrete IGBTs Silicon N-Channel IGBT GT40WR21 GT40WR21 1. Applications (Note) • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.15 µs (typ.) (IC = 40 A) FWD : trr = 1.0 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 2.9 V (typ.) (IC = 40 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2011-05 2018-04-23 Rev.3.0 GT40WR21 4.
Published: |