Datasheet Summary
Discrete IGBTs Silicon N-Channel IGBT
1. Applications (Note)
- Dedicated to Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching
IGBT : tf = 0.15 µs (typ.) (IC = 40 A) FWD : trr = 1.0 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 2.9 V (typ.) (IC = 40 A) (6) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate 2: Collector 3: Emitter
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