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Discrete IGBTs Silicon N-Channel IGBT
GT50J123
1. Applications
• Hard Switching • High-Speed Switching • Power Factor Correction (PFC)
2. Features
(1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 50 A, Ta = 25 ) (3) High junction temperature: Tj = 175 (max)
3. Packaging and Internal Circuit
GT50J123
TO-3P(N)
1: Gate 2: Collector (heatsink) 3: Emitter
©2018 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2018-10
2018-11-15 Rev.1.0
GT50J123
4.
GT50J123 Datasheet
