Datasheet4U Logo Datasheet4U.com

GT50J342 - Silicon N-Channel IGBT

Datasheet Summary

Features

  • (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ. ) (IC = 50 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50J342 TO-3P(N) 1: Gate 2: Collector (Heat sink) 3: Emitter Start of commercial production 2012-12 1 2014-01-07 Rev.2.0 GT50J342 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emi.

📥 Download Datasheet

Datasheet preview – GT50J342

Datasheet Details

Part number GT50J342
Manufacturer Toshiba
File Size 322.29 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT50J342 Datasheet
Additional preview pages of the GT50J342 datasheet.

📁 Similar Datasheet

  • GT50J301 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J322 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J325 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT50J327 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J328 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT50J102 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J121 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J122 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50G102 - Insulated Gate Bipolar Transistor (ETC)
  • GT50G321 - silicon N-channel IGBT (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
Discrete IGBTs Silicon N-Channel IGBT GT50J342 1. Applications • Motor Drivers 2. Features (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 50 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50J342 TO-3P(N) 1: Gate 2: Collector (Heat sink) 3: Emitter Start of commercial production 2012-12 1 2014-01-07 Rev.2.0 GT50J342 4.
Published: |