HN2A01FU datasheet by Toshiba.
| Part number | HN2A01FU |
|---|---|
| Datasheet | HN2A01FU-Toshiba.pdf |
| File Size | 500.04 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Epitaxial Type Transistor |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) HN2A01FU Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = −50 V, IC = −150 mA (max) High hFE : hFE = 120 to 400 Excellent hFE linearity.
| Part Number | Description |
|---|---|
| HN20S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN20S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2D01F | Silicon Epitaxial Planar Type Diode |
| HN2D01FU | Silicon Epitaxial Planar Type Diode |
| HN2D01JE | Silicon Epitaxial Planar Type Diode |
| HN2D02FU | Silicon Epitaxial Planar Type Diode |
| HN2D03F | Silicon Epitaxial Planar Type Diode |
| HN2E04F | MULTI CHIP DISCRETE DEVICE |
| HN2S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
