HN2E04F
HN2E04F is MULTI CHIP DISCRETE DEVICE manufactured by Toshiba.
TOSHIBA MULTI CHIP DISCRETE DEVICE
Super High Speed Switching Application
Audio Frequency Amplifier Application
Audio Low Noise Amplifier Application
Q1
High Voltage
: VCEO =
- 120V
High DC Current Gain : h FE = 200 to 700
Good h FE Linearity
Q2
: h FE(IC =- 0.1m A)/ h FE(IC =- 2m A) = 0.95
Low Forward Voltage Drop : VF(3) = 0.98V (typ.)
Fast Reverse Recovery Time : trr = 1.6ns (typ.)
Low Total Capacitance
: CT = 0.5p F (typ.)
Q1 (Transistor) Q2 (Diode)
: 2SA1587 equivalent : 1SS352 equivalent
Unit: mm
Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
VCBO VCEO VEBO
IC IB
- 120
- 120
- 5
- 100 m A
- 20 m A
Q2 (Diode) Absolute Maximum Ratings (Ta = 25°C)
JEDEC
―
JEITA
―...
