Multi Chip Discrete Device
| Part number | HN2E04F |
|---|---|
| Manufacturer | Toshiba |
| File Size | 572.15 KB |
| Description | MULTI CHIP DISCRETE DEVICE |
| Datasheet | HN2E04F-Toshiba.pdf |
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TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F HN2E04F Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage : VCEO = −120V High DC Current Gain : hFE = 200 to 700 Good hFE Linearity Q2.
| Part Number | Description |
|---|---|
| HN20S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN20S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2A01FU | Silicon PNP Epitaxial Type Transistor |
| HN2D01F | Silicon Epitaxial Planar Type Diode |
| HN2D01FU | Silicon Epitaxial Planar Type Diode |
| HN2D01JE | Silicon Epitaxial Planar Type Diode |
| HN2D02FU | Silicon Epitaxial Planar Type Diode |
| HN2D03F | Silicon Epitaxial Planar Type Diode |
| HN2S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
