HN2E04F is MULTI CHIP DISCRETE DEVICE manufactured by Toshiba.
| Part Number | Description |
|---|---|
| HN20S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN20S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2A01FU | Silicon PNP Epitaxial Type Transistor |
| HN2D01F | Silicon Epitaxial Planar Type Diode |
| HN2D01FU | Silicon Epitaxial Planar Type Diode |
TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F HN2E04F Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage : VCEO = −120V High DC Current Gain : hFE = 200 to 700 Good hFE Linearity Q2.
