HN4C06J is Silicon NPN Epitaxial Type Transistor manufactured by Toshiba.
| Part Number | Description |
|---|---|
| HN4C05JU | Multi Chip Discrete Device |
| HN4C51J | Silicon NPN Epitaxial Type Transistor |
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A08J | Silicon PNP Epitaxial Type Transistor |
| HN4A51J | Silicon PNP Epitaxial Type Transistor |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C06J HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) z Low noise.
