HN4C06J - Silicon NPN Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN4C06J
Manufacturer	Toshiba
File Size	338.37 KB
Description	Silicon NPN Epitaxial Type Transistor
Datasheet	HN4C06J Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C06J HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) z Low noise : NF = 1dB(typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage Collector current Base current Collector power dissipation VEBO IC IB PC* 5 V 100 mA 20 mA 300 mW 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.