HN4C06J
HN4C06J is Silicon NPN Epitaxial Type Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High h FE : h FE = 200 to 700 z Excellent h FE linearity
: h FE (IC = 0.1m A) / h FE (IC = 2m A) = 0.95 (typ.) z Low noise : NF = 1d B(typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 mon)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage Collector current Base current Collector power dissipation
VEBO IC IB PC-
100 m A
20 m A
300 m W
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
Junction temperature
Tj
°C
Storage temperature range
Tstg
- 55 to...
