HN4D01JU Overview
TOSHIBA Diode Silicon Epitaxial Planar Type HN4D01JU HN4D01JU Ultra High Speed Switching Applications z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance.
Silicon Epitaxial Planar Type Diode
| Part number | HN4D01JU |
|---|---|
| Manufacturer | Toshiba |
| File Size | 217.52 KB |
| Description | Silicon Epitaxial Planar Type Diode |
| Datasheet | HN4D01JU-Toshiba.pdf |
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TOSHIBA Diode Silicon Epitaxial Planar Type HN4D01JU HN4D01JU Ultra High Speed Switching Applications z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance.
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|---|---|
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