HN4D01JU Description
TOSHIBA Diode Silicon Epitaxial Planar Type HN4D01JU HN4D01JU Ultra High Speed Switching Applications z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance.
- Part: HN4D01JU
- Manufacturer: Toshiba (official site)
- Size: 217.52 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| HN4D02JU | Silicon Epitaxial Planar Type Diode |
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A08J | Silicon PNP Epitaxial Type Transistor |
| HN4A51J | Silicon PNP Epitaxial Type Transistor |
| HN4A56JU | Silicon PNP Epitaxial Type Transistor |