Silicon Epitaxial Planar Type Diode
| Part number | HN4D02JU |
|---|---|
| Manufacturer | Toshiba |
| File Size | 230.75 KB |
| Description | Silicon Epitaxial Planar Type Diode |
| Datasheet | HN4D02JU-Toshiba.pdf |
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TOSHIBA Diode Silicon Epitaxial Planar Type HN4D02JU Ultra High Speed Switching Applications Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance.
| Part Number | Description |
|---|---|
| HN4D01JU | Silicon Epitaxial Planar Type Diode |
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A08J | Silicon PNP Epitaxial Type Transistor |
| HN4A51J | Silicon PNP Epitaxial Type Transistor |
| HN4A56JU | Silicon PNP Epitaxial Type Transistor |
| HN4B01JE | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B06J | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B101J | Silicon NPN/PNP Epitaxial Type Transistor |
| HN4B102J | Silicon PNP/NPN Transistor |
| HN4C05JU | Multi Chip Discrete Device |
