HN4D02JU
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
- Low forward voltage
: VF (3) = 0.90V (typ.)
- Fast reverse recovery time : trr = 1.6ns (typ.)
- Small total capacitance : CT = 0.9p F (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
300- m A
Average forward current
100- m A
Surge current (10ms)
IFSM
2-
1. Anode 1
Power dissipation
200-
- m W
2. Cathode
Junction temperature
Tj
°C
3. Anode 2
Storage temperature
Tstg
- 55 to...
