HN4D02JU Description
TOSHIBA Diode Silicon Epitaxial Planar Type HN4D02JU Ultra High Speed Switching Applications Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance.
- Part: HN4D02JU
- Manufacturer: Toshiba (official site)
- Size: 230.75 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| HN4D01JU | Silicon Epitaxial Planar Type Diode |
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A08J | Silicon PNP Epitaxial Type Transistor |
| HN4A51J | Silicon PNP Epitaxial Type Transistor |
| HN4A56JU | Silicon PNP Epitaxial Type Transistor |