HN4D02JU - Silicon Epitaxial Planar Type Diode

Toshiba

Datasheet Details

Part number	HN4D02JU
Manufacturer	Toshiba
File Size	230.75 KB
Description	Silicon Epitaxial Planar Type Diode
Datasheet	HN4D02JU Datasheet

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TOSHIBA Diode Silicon Epitaxial Planar Type HN4D02JU Ultra High Speed Switching Applications  Low forward voltage : VF (3) = 0.90V (typ.)  Fast reverse recovery time : trr = 1.6ns (typ.)  Small total capacitance : CT = 0.9pF (typ.) HN4D02JU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300* mA Average forward current IO 100* mA Surge current (10ms) IFSM 2* A 1. Anode 1 Power dissipation P 200** mW 2. Cathode Junction temperature Tj 150 °C 3. Anode 2 Storage temperature Tstg 55 to 150 °C USV 4. Anode 3 Note: Using continuously under heavy loads (e.g. the application of high 5.