K4110 Datasheet | Toshiba

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications - - - - Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit:...