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K4110 - 2SK4110

Key Features

  • s. Do not use Product for Unintende.

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Full PDF Text Transcription (Reference)

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2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.