Datasheet Summary
2SK4111
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4111
Switching Regulator Applications
Unit: mm
- -
- -
Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1...