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MG150Q2YS51 Datasheet

Manufacturer: Toshiba
MG150Q2YS51 datasheet preview

Datasheet Details

Part number MG150Q2YS51
Datasheet MG150Q2YS51_ToshibaSemiconductor.pdf
File Size 255.70 KB
Manufacturer Toshiba
Description N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG150Q2YS51 page 2 MG150Q2YS51 page 3

MG150Q2YS51 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 MG150Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive Load l Low saturation voltage.

MG150Q2YS51 Key Features

  • High input impedance
  • High speed : tf = 0.3µs (Max) @Inductive Load
  • Low saturation voltage : VCE (sat) = 3.6V (Max)
  • Enhancement-mode
  • Includes a plete half bridge in one package
  • The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Wei
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