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MG150Q2YS51 - N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)

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Datasheet Details

Part number MG150Q2YS51
Manufacturer Toshiba
File Size 255.70 KB
Description N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
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Full PDF Text Transcription

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TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 MG150Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case.
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