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MG150Q2YS50

Manufacturer: Toshiba

MG150Q2YS50 datasheet by Toshiba.

MG150Q2YS50 datasheet preview

MG150Q2YS50 Datasheet Details

Part number MG150Q2YS50
Datasheet MG150Q2YS50_ToshibaSemiconductor.pdf
File Size 253.60 KB
Manufacturer Toshiba
Description N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG150Q2YS50 page 2 MG150Q2YS50 page 3

MG150Q2YS50 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 MG150Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage.

MG150Q2YS50 Key Features

  • High input impedance
  • High speed : tf = 0.3µs (Max) @Inductive load
  • Low saturation voltage : VCE (sat) = 3.6V (Max)
  • Enhancement-mode
  • Includes a plete half bridge in one package
  • The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EITA TOSHIBA Wei
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