Datasheet Summary
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Unit: mm l High input impedance l High speed : tf = 0.3µs (Max)
@Inductive load l Low saturation voltage
: VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a plete half bridge in one package. l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
JEDEC EITA TOSHIBA Weight: 255g
Characteristic
Collector-emitter voltage Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque...