Datasheet Summary
TOSHIBA IGBT Module Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Unit: mm l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Collector power dissipation
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP PC Tj Tstg
VIsol
―
JEDEC JEITA TOSHIBA
Rating
600 ±20 150 300 450 150
- 40 to 125 2500 (AC 1 min.) 2/3
Unit V V
W °C °C V N- m
― ― 2-33F2A
1 2003-04-11
Electrical Characteristics (Ta =...