Datasheet Summary
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Unit: mm l The electrodes are isolated from case l High input impedance l Includes a plete half bridge in one package l Enhancement-mode l High speed
: tf = 0.30µs (Max) (IC = 150A) trr = 0.15µs (Max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 150A)
Equivalent Circuit
JEDEC EIAJ TOSHIBA
― ― 2-95A1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature...