MG150J7KS50 - TOSHIBA GTR Module Silicon N Channel IGBT

Toshiba

Datasheet Details

Part number	MG150J7KS50
Manufacturer	Toshiba
File Size	119.23 KB
Description	TOSHIBA GTR Module Silicon N Channel IGBT
Datasheet	MG150J7KS50 Datasheet

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MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications l l l l l The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT : : : : Outline Weight: 520g Inverter stage VCE (sat) = 2.8V (max) (@IC = 150A) tf = 0.5µs (max) (@IC = 150A) trr = 0.3µs (max) (@IF = 150A) l l : TOSHIBA 2-110A1B Equivalent Circuit 1 2001-08-16 MG150J7KS50 Inverter Stage Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 150 300 150 300 320 150 −40 ~ 125 2500 (AC 1 min.