Datasheet Summary
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching applications Motor Control Applications
Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage
: VCE (sat) = 4.0V (max) l Enhancement-mode l Includes a plate half bridge in one package. l The electrodes are isolated from case.
Equivalent Circuit
JEDEC JEITA TOSHIBA Weight: 430g (typ.)
― ― 2-109C1A
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation...