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MG400V2YMS3 - Silicon Carbide N-Channel MOSFET

Features

  • (1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150.
  • , built in thermistor. (3) Enhancement mode. (4) Electrodes are isolated from metal base plate. 3. Packaging and Internal Circuit Note: P and N terminal should use one screw to fasten in each and AC terminal should use two screws to fasten. Note 1: When the thermistor is not used, pin 1 and pin 2 should be electrically connected to pin 12.

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Datasheet Details

Part number MG400V2YMS3
Manufacturer Toshiba
File Size 555.73 KB
Description Silicon Carbide N-Channel MOSFET
Datasheet download datasheet MG400V2YMS3 Datasheet
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Full PDF Text Transcription

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High-Power Module Silicon Carbide N-Channel MOSFET MG400V2YMS3 MG400V2YMS3 1. Applications • High-Power Switching • Motor Controllers (including rail traction) 2. Features (1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150 �, built in thermistor. (3) Enhancement mode. (4) Electrodes are isolated from metal base plate. 3. Packaging and Internal Circuit Note: P and N terminal should use one screw to fasten in each and AC terminal should use two screws to fasten. Note 1: When the thermistor is not used, pin 1 and pin 2 should be electrically connected to pin 12. ©2021-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-11 2023-02-24 Rev.4.0 4.
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