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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S24U
VHF~UHF Band Low Noise Amplifier Applications
• Low Noise Figure: NF = 1.55dB(Typ.) (@f = 2GHz) • High Gain: |S21e|2 = 11.5dB(Typ.) (@f = 2 GHz)
MT4S24U
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC(Note.1) Tj Tstg
Rating
10 5 2 50 10 175 150 −55 to 150
Unit
V V V mA mA mW °C °C
USQ
1.Emitter1(E1) 2.Collector(C) 3.Emitter2(E2) 4.Base(B)
JEDEC
―
JEITA
―
TOSHIBA
2-2K1A
Weight: 6 mg (typ.)
Note.1: The device is mounted on a FR4 board (20mm X 25mm X 1.55 mm (t))
Note.