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RN2308 - Silicon PNP Epitaxial Type Transistors

This page provides the datasheet information for the RN2308, a member of the RN2307 Silicon PNP Epitaxial Type Transistors family.

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1307 to RN1309 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2307 RN2308 RN2309 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices &.

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Datasheet Details

Part number RN2308
Manufacturer Toshiba
File Size 841.70 KB
Description Silicon PNP Epitaxial Type Transistors
Datasheet download datasheet RN2308 Datasheet
Additional preview pages of the RN2308 datasheet.

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Full PDF Text Transcription

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RN2307 to RN2309 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2307/08/09 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1307 to RN1309 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2307 RN2308 RN2309 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1988-04 2021-08-24 Rev.2.
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