RN2507 Datasheet | Toshiba

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications - Including two devices in SMV (super mini type with 5 leads) - With built-in bias resistors - Simplify circuit design - Reduce a quantity of parts and manufacturing process - plementary to RN1507 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) 1.BASE 1 (B1) 2.EMITTER (E) 3.BASE 2 (B2) 4.COLLECTOR 2 (C2) 5.COLLECTOR 1 (C1) JEDEC ― JEITA ― TOSHIBA 2-3L1S Weight: 14mg (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 mon) Characteristics Symbol Rating Unit Equivalent Circuit (top view) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC PC- Tj Tstg - 50 - 50 - 6 - 100 m A 300 m...