• Part: RN2707JE
  • Description: Silicon PNP Epitaxial Type Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 335.17 KB
Download RN2707JE Datasheet PDF
Toshiba
RN2707JE
RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2707JE, RN2708JE, RN2709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm - Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. - Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more pact equipment and lowers assembly cost. - A wide range of resistor values are available for use in various circuit designs. - plementary to RN1707JE to RN1709JE Equivalent Circuit and Bias Resistor Values R1 B R2 Type No. RN2707JE RN2708JE RN2709JE R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristics Symbol Rating Unit Collector-base voltage VCBO - 50 Collector-emitter voltage to 2709JE VCEO - 50 - 6 Emitter-base voltage RN2708JE VEBO -...