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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
S1807
PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERSDESIGNED FOR COMPLEMENTARY USE WITH S1808-
FEATURES: . Low Saturation Voltage : VCE ( sat )=0. 5V(Max. at Ic=500mA . Complementary to S1808.
Unit in mm
5.1 MAX.
a 55 MAX
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL vCBO vCEO vEBO
IB PC
[ stg
RATING
35 30
800 200 625 150 -55-150
UNIT
mA mA mV
1. EMITTER 2. BASE a COLLECTOR
TOSHIBA
TO-92 SC-43
Weight : 0.
S1807 Datasheet
