S1808 - Silicon PNP Transistor

Toshiba

Key Features

Low Sat «ation Voltage : VfEfsst )==-0.7V(Max. ) at J (>- 500mA . Complement aty to SI 807.

S1808 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	S1808
Manufacturer	Toshiba
File Size	82.63 KB
Description	Silicon PNP Transistor
Datasheet	S1808 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
S1805	Silicon NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER OUTPUT STAGE OF AUDIO AMPLIFIERS. AND DESIGNED FOR COMPLEMENTARY USE WITH S1807 FEATURES: • Low Sat «ation Voltage : VfEfsst )==-0.7V(Max. ) at J (>- 500mA .