S1836 - Silicon NPN Transistor

Toshiba

Key Features

. Complementary to S1837. . 300V Minimum V(br)cEO . Low Saturation Voltage : VcE(sat )=°- 5V(Max. . Small Collector Output Capacitance. 5.1 MAX. Unit in mm.

S1836 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	S1836
Manufacturer	Toshiba
File Size	124.29 KB
Description	Silicon NPN Transistor
Datasheet	S1836 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
S1837	Silicon PNP Transistor
S1838	Silicon NPN Transistor
S1839	Silicon PNP Transistor
S1805	Silicon NPN Transistor
S1806	Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) S1836 FOR HIGH VOLTAGE AMPLIFIER APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS COLOR TV VIDEO OUTPUT APPLICATIONS FEATURES: . Complementary to S1837. . 300V Minimum V(br)cEO . Low Saturation Voltage : VcE(sat )=°- 5V(Max. . Small Collector Output Capacitance. 5.1 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vCBO vCEO vEBO PC T-i r stg RATING 300 300 UNIT i. EMITTER 2.