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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
DRIVER STAGE AMPLIFIER APPLICATIONSVOLTAGE AMPLIFIER APPLICATIONS-
FEAT [-RES': • Complementary to S1839. • Driver Stage Application of 20 to 25 Watts Amplifiers
I nit in mm
Storage
I
Temperature
Range
ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC
CONDITION
Emitter Cut-off Current
Collector-Emitter Brrakdovn Voltage
r EB0
VCB=50V, IE =o VEB =5V, I c=o
V (BR)CE0 I c =5mA, Ib=0
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance
JFE(l) VCE =2V, I c =50mA hFE(2) VCE =2V, I c =200mA VCE(sat) Ic=200mA, I B =10mA
VBE
fT
Cob
VCE =2V, I c =5mA Vce=10V, I c =10mA VCB =10V, I E =Q, f=lMHz
MIN.
TYP.
MAX. 100
UNIT
70 40
0.55 100 10
240
0.5 0.
S1838 Datasheet
