SSM3J372R Datasheet | Toshiba

Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Configuration 1. Gate 2. Source 3. Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J372R,LF SSM3J372R,LXGF SSM3J372R,LXHF - YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2017-2022 Toshiba Electronic Devices & Storage Corporation 2022-06-29 Rev.4.0 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25- ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 Gate-source voltage VGSS -12/+6 Drain current (DC) (Note 1) -6.0 Drain current (pulsed) (Note...