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SSM3J372R - Silicon P-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Configuration SSM3J372R 1. Gate 2. Source 3. Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J372R,LF SSM3J372R,LXGF SSM3J372R,LXHF.
  • YES YES (N.

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Datasheet Details

Part number SSM3J372R
Manufacturer Toshiba
File Size 299.78 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J372R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J372R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Configuration SSM3J372R 1. Gate 2. Source 3. Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J372R,LF SSM3J372R,LXGF SSM3J372R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.