• Part: SSM3K2615R
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Toshiba
  • Size: 413.43 KB
Download SSM3K2615R Datasheet PDF
Toshiba
SSM3K2615R
Features (1) AEC-Q101 Qualified (Note1). (2) 3.3-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 380 mΩ (typ.) (@VGS = 3.3 V, ID = 0.5 A) RDS(ON) = 330 mΩ (typ.) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 230 mΩ (typ.) (@VGS = 10 V, ID = 1.0 A) Note1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment SOT-23F 1: Gate 2: Source 3: Drain Start of mercial production 2014-10 2015-01-30 Rev.2.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) Drain current (pulsed) (Note 1), (Note 2) Power dissipation (Note 3) Power dissipation (t = 10 s) (Note 3) Channel temperature Tch ...