SSM3K2615TU
Features
(1) AEC-Q101 Qualified (Note1). (2) 3.3-V gate drive voltage. (3) Low drain-source on-resistance
: RDS(ON) = 380 mΩ (typ.) (@VGS = 3.3 V, ID = 0.5 A) RDS(ON) = 330 mΩ (typ.) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 230 mΩ (typ.) (@VGS = 10 V, ID = 1.0 A)
Note1: For detail information, please contact to our sales.
3. Packaging and Pin Assignment
1: Gate 2: Source 3: Drain
©2016 Toshiba Corporation
Start of mercial production
2016-06
2016-12-05 Rev.2.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1), (Note 2)
Power dissipation
(Note 3)
Power dissipation
(t = 10 s)
(Note 3)
Channel temperature
Tch
Single-pulse avalanche...
