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SSM3K48FU - Silicon N-Channel MOSFET

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SSM3K48FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM3K48FU Load Switching Applications • 2.5-V drive • Low ON-resistance: RDS(ON) = 3.2 Ω (max) (@VGS = 4.0 V) RDS(ON) = 5.4 Ω (max) (@VGS = 2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDSS 30 V VGSS ±20 V ID 100 mA IDP 400 PD (Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C USM JEDEC 1. Gate 2. Source 3. Drain ― Note: Using continuously under heavy loads (e.g. the application of JEITA SC-70 high temperature/current/voltage and the significant change in temperature, etc.
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