SSM6J825R
SSM6J825R is Silicon P-Channel MOSFET manufactured by Toshiba.
Features
(1) 4.0-V drive (2) Low drain-source on-resistance
: RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V)
3. Packaging and Pin Assignment
TSOP6F
1, 2, 5, 6: Drain 3: Gate 4: Source
©2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2021-12
2021-11-02 Rev.1.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-30
Gate-source voltage
VGSS
-20 / +10
Drain current (DC)
(Note 1)
-4
Drain current (pulsed)
(Note 1), (Note 2)
-12
Power dissipation Power dissipation Channel temperature t ≤ 10 s
(Note 3)
(Note...
