SSM6J825R Datasheet PDF (Silicon P-Channel MOSFET)

SSM6J825R - Silicon P-Channel MOSFET

Features

(1) 4.0-V drive (2) Low drain-source on-resistance : RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment TSOP6F SSM6J825R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-12 2021-11-02 Rev.1.0 SSM6J825R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit.

Datasheet Details

Part number	SSM6J825R
Manufacturer	Toshiba
File Size	418.25 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM6J825R Datasheet
Additional preview pages of the SSM6J825R datasheet.

📁 Similar Datasheet

SSM6J06FU - Power Management Switch (Toshiba Semiconductor)

SSM6J07FU - Power Management Switch (Toshiba Semiconductor)

SSM6J08FU - Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J205FE - High-Speed Switching Applications (Toshiba Semiconductor)

SSM6J206FE - High-Speed Switching Applications (Toshiba Semiconductor)

SSM6J207FE - Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J212FE - Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J213FE - Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J214FE - Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM6J215FE - Silicon P-Channel MOSFET (Toshiba Semiconductor)

Full PDF Text Transcription

Click to expand full text

MOSFETs Silicon P-Channel MOS SSM6J825R 1. Applications • Power Management Switches 2. Features (1) 4.0-V drive (2) Low drain-source on-resistance : RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment TSOP6F SSM6J825R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-12 2021-11-02 Rev.1.0 SSM6J825R 4.

Published: Dec 15, 2023 |