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TC518129AFWI-10 - SILICON GATE CMOS PSEUDO STATIC RAM

Description

The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.

The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of R!W thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129AFWI, with the CE2 pin in the TC518128A family changed to a CS pin. The TC518129AFWI is guaranteed over an operating temperature range of -40 - 85°C so the TC518129AFWI is suitable for use in wide operatin.

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Datasheet Details

Part number TC518129AFWI-10
Manufacturer Toshiba
File Size 341.21 KB
Description SILICON GATE CMOS PSEUDO STATIC RAM
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TOSHIBA 1l:518129~-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129AFWI operates from a single 5V power supply. Refreshing is supported by a refresh (RFSHl input which enables two types of refreshing - auto refresh and self refresh. The TC518129AFWI features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of R!W thus simplifying the microprocessor interface.
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