TC518129AFWI-10 datasheet by Toshiba.
| Part number | TC518129AFWI-10 |
|---|---|
| Datasheet | TC518129AFWI-10-Toshiba.pdf |
| File Size | 341.21 KB |
| Manufacturer | Toshiba |
| Description | SILICON GATE CMOS PSEUDO STATIC RAM |
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The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129AFWI operates from a single 5V power supply.
| Part Number | Description |
|---|---|
| TC518129AFW-10 | CMOS Pseudo Static RAM |
| TC518129AFW-12 | CMOS Pseudo Static RAM |
| TC518129AFW-80 | CMOS Pseudo Static RAM |
| TC518129AFWL-10 | CMOS Pseudo Static RAM |
| TC518129AFWL-10LV | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC518129AFWL-12 | CMOS Pseudo Static RAM |
| TC518129AFWL-12LV | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC518129AFWL-80 | CMOS Pseudo Static RAM |
| TC518129AFWL-80LV | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC518129AF-10 | CMOS Pseudo Static RAM |
