TC518129AFWI-10 Description
The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129AFWI operates from a single 5V power supply.
TC518129AFWI-10 Key Features
- 85°C so the TC518129AFWI is suitable for use in wide operatin