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TC518129AFWI-10 - SILICON GATE CMOS PSEUDO STATIC RAM

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Toshiba

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TC518129AFWI-10 SILICON GATE CMOS PSEUDO STATIC RAM by Toshiba - Datasheet Preview — Datasheet preview – TC518129AFWI-10

Datasheet Details

Part number	TC518129AFWI-10
Manufacturer	Toshiba
File Size	341.21 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC518129AFWI-10 Datasheet
Additional preview pages of the TC518129AFWI-10 datasheet.

Product details

Description

The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.

Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of R!W thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129AFWI, with the CE2 pin in the TC518128A family changed to a CS pin. The TC518129AFWI is guaranteed over an operating temperature range of -40 - 85°C so the TC518129AFWI is suitable for use in wide operatin.

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Published: Feb 16, 2017 |