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TC554161TRL-70L - SILICON GATE CMOS STATIC RAM

This page provides the datasheet information for the TC554161TRL-70L, a member of the TC554161FTL-70L SILICON GATE CMOS STATIC RAM family.

Datasheet Summary

Description

The TC554161 FTUfRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply.

Features

  • with an operating current of 10mNMHz (typ. ) and a minimum cycle time of 70ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 601-!A (max. ). The TC554161 FTUfRL has two control inputs. A chip enable input (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. Byte access is supported by upper and lower byte controls. The TC554161 FTUfRL is suitable for use in microproc.

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Datasheet Details

Part number TC554161TRL-70L
Manufacturer Toshiba
File Size 252.51 KB
Description SILICON GATE CMOS STATIC RAM
Datasheet download datasheet TC554161TRL-70L Datasheet
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Full PDF Text Transcription

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TOSHIBA 1l:554161F1nLJ1]{L-70L/85L/I0L SILICON GATE CMOS PRELIMINARY 262,144 WORD x 16 BIT STATIC RAM Description The TC554161 FTUfRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mNMHz (typ.) and a minimum cycle time of 70ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 601-!A (max.). The TC554161 FTUfRL has two control inputs. A chip enable input (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. Byte access is supported by upper and lower byte controls.
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