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TC5563APL-12 - CMOS Static RAM

This page provides the datasheet information for the TC5563APL-12, a member of the TC5563APL-10 CMOS Static RAM family.

Datasheet Summary

Description

The TC5563APL is 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply.

Features

  • with a maximum operating current of 5mA/MHz and maximum access time of 1OOns/ 120ns/ 150ns. When CE2 is a logical low or CE 1 is a logical high. the device is placed in low power standby mode in which standby current is 2J. lA typically. The TC5563APL has three control inputs. Two chip enables (CE1, CE2) allow for device selection and data retention control. and an output enable input (OE) provides fast memory access. Thus the TC5563APL is suitable for use in various microprocessor.

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Datasheet preview – TC5563APL-12

Datasheet Details

Part number TC5563APL-12
Manufacturer Toshiba
File Size 264.53 KB
Description CMOS Static RAM
Datasheet download datasheet TC5563APL-12 Datasheet
Additional preview pages of the TC5563APL-12 datasheet.

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TOSHIBA MOS MEMORY PRODUCT 8,192 WORD X 8 BIT CMOS STATIC RAM TC5563APL-10, TC5563APL-12 SILICON GATE CMOS TC5563APL-15 PRELIMINARY DESCRIPTION The TC5563APL is 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz and maximum access time of 1OOns/ 120ns/ 150ns. When CE2 is a logical low or CE 1 is a logical high. the device is placed in low power standby mode in which standby current is 2J.lA typically. The TC5563APL has three control inputs. Two chip enables (CE1, CE2) allow for device selection and data retention control. and an output enable input (OE) provides fast memory access.
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