TC55V8512J Overview
The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.
TC55V8512J Key Features
- Fast access time (the following are maximum values) TC55V8512J/FT-12:12 ns TC55V8512J/FT-15:15 ns Low-power dissipation
- 1.5 V with a pulse width of 20% tRC min (4 ns max) --: VDD + 1.5 V with a pulse width of 20% tRC min (4 ns max)