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TC57256AD - CMOS ultraviolet light erasable and electrically programmable read only memory

General Description

The TC57256AD is a 32,768 word X 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory.

For read operation, the TC57256AD's access time is 150ns.

Key Features

  • Peripheral circuit: CMOS Memory cell : N-MOS Low power dissipation Active: 40mA/6.7MHz Standby: lOO~A.
  • Fast access time: TC572S6AD-IS lSOns TCS7256AD-20 200ns IPIN.

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Datasheet Details

Part number TC57256AD
Manufacturer Toshiba
File Size 323.67 KB
Description CMOS ultraviolet light erasable and electrically programmable read only memory
Datasheet download datasheet TC57256AD Datasheet

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TC57256AD-15 CMOS ultraviolet light erasable and electrically programmable read only memory
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA MOS MEMORY PRODUCT I DESCRIPTIONI TC57256AD-15 TC57256AD-20 The TC57256AD is a 32,768 word X 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. For read operation, the TC57256AD's access time is 150ns. The TC57256AD operates from a single 5-volt power supply and has a low power standby mode which reduces power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input. Advanced CMOS technology reduces the maximum active current to 40mN6.7MHz and the standby current to lOOJ.LA. For program operation, the programming is achieved by using the high speed prgramming mode. The TC57256AD is fabricated using CMOS technology and N-channel silicon double layer gate MOS technology.